Samsung emphasizes the development of second-generation DDR4 memory to accurately 10 nm

Start Samsung mass production of memory DDR4 possible to accurately manufacture 10 nm during the second half of this year, where he is scheduled to come the memory of the 1z-nm DRAM with a capacity of 8 GB.


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Samsung announced recently about the development of the memory of the 1z-nm 8Gb DDR4 to start mass production in the second half of 2019, to train the next generation of servers and the evolving situation scheduled for launch in 2020.

It is provided according to statements made by Samsung to put the memory of the 1z-nm DRAM cores for the next generation of interfaces to DRAM, which comes from DDR5, and LPDDR5, and also to GDDR6.

Emphasizes the Korean giant in her remarks also that the company is keen to keep up with the needs of the market, so plans to increase its production of memory and the DRAM required in the global marketplace now.


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